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PTW20N50

Features
■ RDS(on) (Max 0.26 Ω )@VGS=10V
■ Gate Charge (Typical 90nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)

PTW9N90

Features
■ RDS(on) (Max 1.4 Ω )@VGS=10V
■ Gate Charge (Typical 47nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)

PTU50N03

60A , 25 V N-Channel MOSFET
Features
●RDS(ON) = 5.2mΩ @VGS = 10 V
●Low capacitance
●Optimized gate charge
●Fast switching capability
●Avalanche energy specified

PTU7N65

650V N-Channe MOSFET

Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 16 nC (Typ.)
●BVDSS=650V,ID=6.5A
●Lower RDS(on) : 1.5Ω (Max) @VG=10V
●100% Avalanche Tested

PTU6N65

650V N-Channe MOSFET

Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 16 nC (Typ.)
●BVDSS=650V,ID=6A
●Lower RDS(on) : 1.5Ω (Max) @VG=10V
●100% Avalanche Tested

PTU6N60

600V N-Channe MOSFET

Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 16 nC (Typ.)
●BVDSS=600V,ID=6A
●Lower RDS(on) : 1.5Ω (Max) @VG=10V
●100% Avalanche Tested

PTU5N65

650V N-Channel MOSFET

Features
●Low Intrin sic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 15 nC (Typ.)
●BVDSS=650V,ID=4.5A
●Lower RDS(on) : 2.5Ω (Max) @VG=10V
●100% Avalanche Tested

PTU2N80

HIGH VOLTAGE N-Channel MOSFET
600V N-Channel MOSFET

Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge :12 nC (Typ.)
●BVDSS=800V,ID=2A
●Lower RDS(on) : 6.3 Ω (Max) @VG=10V
●100% Avalanche Tested

PTP9540

P-Channel Enhancement Mode Power MOSFET
Description
The PTP9540 uses advanced trench technology and designto provide excellent RDS(ON) with low gate charge. It can beused in a wide variety of applications.

General Features
● VDS =-100V,ID =-30ARDS(ON) <58mΩ @ VGS=-10V (Typ:50mΩ)
● Super high dense cell design
● Advanced trench process technology
● Reliable and rugged
● High density cell design for ultra low On-Resistance

Application
● Portable equipment and battery powered systems

PTP8580

Description
The PTP8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

General Features
● VDS =85V,ID =80ARDS(ON) < 8.5mΩ @ VGS=10V (Typ:6.8mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Special designed for convertors and power controls
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability

Application
●Power switching application
●Hard switched and High frequency circuits
●Uninterruptible power supply

PTP7190

Description
The PTP7190 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features
● VDS = 71V,ID =90ARDS(ON) < 6.8mΩ @ VGS=10V (Typ:5.9mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation

Application
●Power switching application
●Hard switched and High frequency circuits
●Uninterruptible power supply

PTP1579

Description
The PTP1579 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features
● VDS =150V,ID =79ARDS(ON) < 19mΩ @ VGS=10V (Typ:16mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability

Application
●Power switching application
●Hard switched and high frequency circuits
●Uninterruptible power supply

PTP1550

Description
The PTP1550 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features
● VDS =150V,ID =50A
RDS(ON) <23mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability

Application
●Power switching application
●Hard switched and High frequency circuits
●Uninterruptible power supply

PTF50M06

Features
• 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
• Low gate charge ( typical 33nC)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

General Description
This Power MOSFET is produced using PHILOP’s advance dplanar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power
factor correction, electronic lamp ballasts based on half bridge
topology.

PTP8N60

Features
■ 7.5A,600v,RDS(on)=1.2Ω@VGS=10V
■ Gate charge (Typical 30nC)
■ High ruggedness
■ Fast switching
■ 100% AvalancheTested
■ Improved dv/dt capability

General Description
This Power MOSFET is produced using PHILOP’s advance dplanar stripe,DMOS technology. This latest technology has beenespecially designed to minimize on-state resistance, have a highrugged avalanche characteristics. These devices are well suitedfor high efficiency switch mode power supplies, activepowerfactorcorrection,electroniclampballastsbasedonhalfbridgetopology

PTP5N65-E

Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 15 nC (Typ.)
●BVDSS=650V,ID=4.5A
●Lower RDS(on) : 2.7Ω (Max) @VG=10V
●100% Avalanche Tested

PTP2N80

800V N-Channel MOSFET
Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge :Qg= 13nC (Typ.)
●BVDSS=800V,ID=3A
●RDS(on) : 5 Ω (Max) @VG=10V
●100% Avalanche Tested

PTP01H11

Description
The PTP01H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications

General Features
● VDS =100V,ID =110ARDS(ON) <9mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability

Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply

PTP01H10

Description
The PTP01H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features

● VDS = 100V,ID =100ARDS(ON) < 11mΩ @ VGS=10V (Typ:9.9mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation

Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply

PTF12N60

Features
■ RDS(on) (Max 0.70 Ω )@VGS=10V
■ Gate Charge (Typical 50nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)

PTF10N65

Features
■ RDS(on) (Typical 0.70 Ω )@VGS=10V
■ Gate Charge (Typical 45nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)

General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.

PTF10N60

Features
10.0A, 600V, RDS(on) = 0.750Ω @VGS = 10 V
Low gate charge ( typical 48nC)
High ruggedness
Fast switching
100% avalanche tested
Improved dv/dt capability

PTF8N60

Features
■ RDS(on) (Max 1.2 Ω )@VGS=10V
■ Gate Charge(Typical 28nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range(150°C)

PTF5N60

Features
■4.5A,600v,RDS(on)=2.5Ω@VGS=10V
■ Gate charge (Typical 17nC)
■ High ruggedness
■Fast switching
■100% AvalancheTested
■Improved dv/dt capability

General Description

This Power MOSFET is producedusingPHILOP’s advancedplanar stripe, DMOS technology.This latest technology has beenespecially designed to minimizeon-state resistance, have a highrugged avalanche characteristics, suchas fastswitching time,lowon resistance.low gate charge and especially excellentavalanchecharacteristics.Thispower MOS ET is usually usedatF ACadaptors, on the batterychargerand SMPS

PTF3N80

Features
■ RDS(on) (Max 5.0 Ω )@VGS=10V
■ Gate Charge(Typical 15.0nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range(150°C)

PTD7580

Description
The PTD7580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
General Features
● VDS = 75V,ID =80ARDS(ON) <8mΩ @ VGS=10V(Typ:6.5mΩ)
● Special process technology for high ESD capability
● Special designed for convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation

Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply

PTD630

200V N-Channel MOSFET
Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 22 nC (Typ.)
●BVDSS=200V,ID=9A
●Lower RDS(on) : 0.4 Ω (Max) @VG=10V
●100% Avalanche Tested

PTD50N03

60A , 25 V N-Channel MOSFET
Features
●RDS(ON) = 5.2mΩ @VGS = 10 V
●Low capacitance
●Optimized gate charge
●Fast switching capability
●Avalanche energy specified

PTD30P55

DescriptionThe PTD30P55 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =-55V,ID =-30ARDS(ON) <40mΩ @ VGS=-10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation

Application
●Power switching application
●Hard switched and high frequency circuits
●Uninterruptible power supply

PTD7N65

650V N-Channel MOSFET
Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 16 nC (Typ.)
●BVDSS=650V,ID=6.5A
●Lower RDS(on) : 1.5Ω (Max) @VG=10V
●100% Avalanche Tested

PTD6N65

650V N-Channel MOSFET
Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 16 nC (Typ.)
●BVDSS=650V,ID=6A
●Lower RDS(on) : 1.5Ω (Max) @VG=10V
●100% Avalanche Tested

PTD6N60

600V N-Channel MOSFET
Features
● Low Intrinsic Capacitances
● Excellent Switching Characteristics
● Extended Safe Operating Area
● Unrivalled Gate Charge : 16 nC (Typ.)
● BVDSS=600V,ID=6A
● Lower RDS(on) : 1.5Ω (Max) @VG=10V
● 100% Avalanche Tested

PTD5N65

650V N-Channel MOSFET
Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 15 nC (Typ.)
●BVDSS=650V,ID=4.5A
●Lower RDS(on) : 2.5Ω (Max) @VG=10V
●100% Avalanche Tested

PTD5N50

N-Channel MOSFET
Features
■ RDS(on) (Max 1.5Ω) @ VGS=10V
■ GateCharge(Typical 20nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■MaximumJunctionTemperatureRange(150°C)

PTD2N80

HIGH VOLTAGE N-Channel MOSFET600V N-Channel MOSFET

Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge :12 nC (Typ.)
●BVDSS=800V,ID=2A
●Lower RDS(on) : 6.3 Ω (Max) @VG=10V
●100% Avalanche Tested

PTR1N60

N-CHANNEL 600V - 8 W - 1A DPAK / IPAK / TO-92Power MOSFET
●TYPICAL RDS(on) = 8 W
●EXTREMELY HIGH dv/dt CAPABILITY
● 100% AVALANCHE TESTED
●GATE CHARGE MINIMIZED
●NEW HIGH VOLTAGE BENCHMARK

APPLICATIONS
●SWITCH MODE LOW POWER SUPPLIES(SMPS)
●LOW POWER, LOW COST CFL (COMPACTFLUORESCENT LAMPS)
● LOW POWER BATTERY CHARGERS

PTF9N90

封装形式:TO-220F
类型:单N
ESD Diode:
VDS (V):900
VGS (V):±30
VTH (V)Typ:4
ID* (A) 25°C:9
PD* (W) 25°C:45
RDS(ON) (mΩ max) at VGS= 10V:1.9
RDS(ON) (mΩ max) at VGS= 4.5V:-
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用SMPS

PTP9N90

封装形式:TO-220
类型:单N
ESD Diode:
VDS (V):900
VGS (V):±30
VTH (V)Typ:4
ID* (A) 25°C:9
PD* (W) 25°C:240
RDS(ON) (mΩ max) at VGS= 10V:1.9
RDS(ON) (mΩ max) at VGS= 4.5V:-
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用SMPS

PTF7N80

封装形式:TO-220F
类型:单N
ESD Diode:
VDS (V):800
VGS (V):±30
VTH (V)Typ:4
ID* (A) 25°C:7
PD* (W) 25°C:45
RDS(ON) (mΩ max) at VGS= 10V:1.4
RDS(ON) (mΩ max) at VGS= 4.5V:-
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用SMPS

PTP7N80

封装形式:TO-220
类型:单N
ESD Diode:
VDS (V):800
VGS (V):±30
VTH (V)Typ:4
ID* (A) 25°C:7
PD* (W) 25°C:240
RDS(ON) (mΩ max) at VGS= 10V:1.4
RDS(ON) (mΩ max) at VGS= 4.5V:-
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用SMPS

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